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 DATA SHEET
MOS INTEGRATED CIRCUIT
PD16837
MONOLITHIC QUAD H BRIDGE DRIVER
DESCRIPTION
The PD16837 is a monolithic quad H bridge driver employing power MOS FETs in the output stage. The MOS FETs in the output stage lower the saturation voltage and power consumption as compared with conventional drivers using bipolar transistors. In addition, a low-voltage malfunction prevention circuit is also provided that prevents the IC from malfunctioning when the supply voltage drops. A 30-pin plastic shrink SOP package is adopted to help create compact and slim application sets. In the output stage H bridge circuits, two low-ON resistance H bridge circuits for driving actuators, and another two channels for driving sled motors and loading motors are provided, making the product ideal for applications in CD-ROM and DVD.
FEATURES
* Four H bridge circuits employing power MOS FETs * High-speed PWM drive: Operating frequency: 120 kHz MAX. * Low-voltage malfunction prevention circuit: Operating voltage: 2.5 V (TYP.) * 30-pin shrink SOP (300 mil)
ORDERING INFORMATION
Part Number Package 30-pin plastic SSOP (300 mil)
PD16837GS
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Parameter Control block supply voltage Output block supply voltage Input voltage H bridge drive Power currentNote 1 Symbol VDD VM VIN IDR (pulse) PT TA TCH (MAX) Tstg PW 5 ms, Duty 30 % Conditions Rating -0.5 to +7.0 -0.5 to +15 -0.5 to VDD + 0.5 1.0 1.25 0 to 75 150 -55 to +150 Unit V V V A/phase W C C C
dissipationNote 2
Operating temperature range Peak junction temperature Storage temperature range
Notes 1. When only one channel operates. 2. When mounted on a glass epoxy board (100 mm x 100 mm x 1 mm)
The information in this document is subject to change without notice. Document No. S12764EJ1V0DS00 (1st edition) Date Published January 1998 N CP(K) Printed in Japan
(c)
1998
PD16837
RECOMMENDED OPERATING RANGE
Parameter Control block supply voltage Output block supply voltage H bridge drive current Operating frequency Operating temperature range Peak junction temperature Symbol VDDNote 1 VM IDR (pulse)Note 2 fO TA TCH (MAX) 0 MIN. 4.0 10.8 -600 TYP. 5.0 12.0 MAX. 6.0 13.2 600 120 75 125 Unit V V mA kHz C C
Notes 1. The low-voltage malfunction prevention circuit operates when VDD is 1.5 V or higher but less than 4 V (2.5 V TYP.). 2. PW 5 ms, Duty 10% ELECTRICAL CHARACTERISTICS (TA = 25 C) TA = 25 C and the other parameters are within their recommended operating ranges as described above unless otherwise specified. The parameters other than changes in delay time are when the current is ON. The low-voltage malfunction prevention circuit operates when VDD is 1.5 V to 4 V.
Parameter VM pin current (leakage current) VDD pin current High-level input current Low-level input current High-level input Low-level input voltageNote 1 voltageNote 1 Symbol IM IDD IIH IIL VIH VIL RONa RONb Isa (AVE) Conditions VM = 13.2 V VDD = 6 V VIN = VDD VIN = 0 VDD = 5 V, VM = 12 V VDD = 5 V, VM = 12 V VDD = 5 V, VM = 12 V VDD = 5 V, VM = 12 V VDD = 5 V VM = 12 V Isb (AVE) at 100 kHz 4.5 mA -2.0 3.0 -0.3 3.0 1.5 VDD + 0.3 0.8 4.0 2.0 3.0 MIN. TYP. MAX. 50 200 0.25 Unit
A A
mA
A
V V mA
H bridge ON resistance (chs 2 and 3) H bridge ON resistance (chs 1 and 4) H bridge switching current without load (chs 2 and 3)Note 2 H bridge switching current without load (chs 1 and 4)Note 2
ch2, ch3 2A, 3A, 2B, 3B Output
Parameter Rise time Rising delay time Change in rising delay time Fall time Falling delay time Change in falling delay time Symbol tTLHa tPLHa VDD = 5 V VM = 12 V 20 at 100 kHz Conditions MIN. TYP. MAX. 200 350 110 200 350 130 Unit ns ns ns ns ns ns
tPLHa
tTHLa tPHLa
tPHLa
ch2, ch3 2A-2B, 3A-3B
Parameter Rising delay time differential Falling delay time differential Symbol tPLHa (A-B) tPHLa (A-B) Conditions VDD = 5 V, VM = 12 V 20 at 100kHz MIN. TYP. MAX. 50 50 Unit ns ns
2
Notes 1. The input pins are the IN and SEL pins. 2. Average value of the current consumed internally by an H bridge circuit when the circuit is switched without load.
PD16837
ELECTRICAL CHARACTERISTICS (TA = 25 C) TA = 25 C and the other parameters are within their recommended operating ranges as described above unless otherwise specified. The parameters other than changes in delay time are when the current is ON. ch1, ch4 1A, 4A, 1B, 4B Output
Parameter Rise time Rising delay time Change in rising delay time Fall time Falling delay time Change in falling delay time Symbol tTLHb tPLHb VDD = 5 V VM = 12 V 10 at 100 kHz Conditions MIN. TYP. MAX. 200 350 110 200 350 130 Unit ns ns ns ns ns ns
tPLHb
tTHLb tPHLb
tPHLb
ch1, ch4 1A-1B, 4A-4B
Parameter Rising delay time differential Falling delay time differential Symbol tPLHa (A-B) tPHLa (A-B) Conditions VDD = 5 V, VM = 12 V 10 at 100 kHz MIN. TYP. MAX. 50 50 Unit ns ns
PIN CONFIGURATION
IN1 1 IN2 2 SEL1 3 DGND 4 Output block ch 1 1A 5 PGND1 6 1B 7 VM1 8 2A 9 PGND2 10 Output block ch 2 2B 11 VM2 12 IN3 13 IN4 14 SEL2 15
30 SEL4 29 IN8 28 IN7 27 VM4 26 4B 25 PGND4 24 4A 23 VM3 22 3B 21 PGND3 20 3A 19 VDD 18 SEL3 17 IN6 16 IN5 Output block ch 3 Output block ch 4
3
PD16837
TYPICAL CHARACTERISTICS
PT vs. TA Characteristics 2
Total poser dissipation PT (W)
IDD vs. VDD Characteristics 100 VM = 12 V TA = 25 C
Supply current IDD ( A)
80
1.25 W 1 100 C/W
60
40
20
0 0 25 50 75 100 125 150 Ambient temperature TA (C)
0
3
4
5 Supply voltage VDD (V)
6
7
VIH, VIL, vs. VDD Characteristics 3
H bridge ON resistance RON ()
RON vs. VM Characteristics VDD = 5 V TA = 25 C 3 RONa
VM = 12 V TA = 25 C
Input voltage VIH, VIL (V)
VIH 2 VIL
2
RONb
1
3
4
5 Supply voltage VDD (V)
6
7
1 10
11
12 Motor voltage VM (V)
13
14
ISa, ISb vs. VDD Characteristics
Switching current without load ISa, ISb (mA)
IIH vs. TA Characteristics 0.2
High-level input current IIH (mA)
2 VDD = 5 V TA = 25 C ISb
VIN = VDD
1 ISa
0.1
0
0 3 4 5 Supply voltage VDD (V) 6 7 0 20 40 60 Ambient temperature TA (C)
4
PD16837
IDD vs. TA Characteristics 100 VDD = 6 V VDD pin current IDD ( A) Input voltage VIH, VIL (V) 80 1.95 VIH 1.9 VIL 1.85 2 VDD = 5 V VM = 12 V VIH, VIL vs. TA Characteristics
60
40
20
0
0
20
40
60
1.8
0
20
40
60
Ambient temperature TA (C)
Ambient temperature TA (C)
ISa, ISb vs. TA Characteristics Switching current without load ISa, ISb (mA) 1 ISb 0.8 H bridge ON resistance RON () 4
RON vs. TA Characteristics
RONa 3
0.6 ISa 0.4
2
RONb
0.2
1 VDD = 5 V VM = 12 V 0 0 20 40 60
0
VDD = 5 V VM = 12 V 100 kHz 0 20 40 60 Ambient temperature TA (C)
Ambient temperature TA (C)
tTLH, tTHL vs. TA Characteristics (chs 1 and 4) 100 Rise time/fall time tTLH, tTHL (ns) Rise time/fall time tTLH, tTHL (ns) 100
tTLH, tTHL vs. TA Characteristics (chs 2 and 3)
90 tTHL 80 tTLH 70
90
80
tTLH tTHL
70
60
50
VDD = 5 V, VM = 12 V 100 kHz, 10 0 20 40 60 Ambient temperature TA (C)
60
50
VDD = 5 V, VM = 12 V 100 kHz, 20 0 20 40 60 Ambient temperature TA (C)
5
PD16837
Rising/falling delay time (chs 2 and 3) tPLH, tPHL (ns) Rising/falling delay time (chs 1 and 4) tPLH, tPHL (ns) tPLH, tPHL vs. TA Characteristics (chs 1 and 4) 300 tPLH 250 tPHL 200 tPLH, tPHL vs. TA Characteristics (chs 2 and 3)
300 tPLH
250 tPHL
200
150 VDD = 5 V, VM = 12 V 100 kHz, 10 0 20 40 60 Ambient temperature TA (C)
150 VDD = 5 V, VM = 12 V 100 kHz, 20 0 20 40 60 Ambient temperature TA (C)
100
100
tPLH, tPHL vs. TA Characteristics (chs 1 and 4)
100
Rising/falling time differential (chs 2 and 3) tPLH, tPHL (ns)
Rising/falling time differential (chs 1 and 4) tPLH, tPHL (ns)
tPLH, tPHL vs. TA Characteristics (chs 2 and 3) tPHL
80
100
80
tPHL tPLH
60
60
tPLH
40
40
20
0
VDD = 5 V, VM = 12 V 100 kHz, 10 0 20 40 60 Ambient temperature TA (C)
20
0
VDD = 5 V, VM = 12 V 100 kHz, 20 0 20 40 60 Ambient temperature TA (C)
6
PD16837
PACKAGE DIMENSION
30-PIN SHRINK SOP (300 mil) (unit: mm)
30 16 detail of lead end
1 13.0 MAX.
15
1.550.1
7.70.3 5.60.2 1.050.2
1.8 MAX.
0.10.1
0.8
+0.10 0.35-0.05
0.10 0.10 M
0.9 MAX.
0.20 -0.05
+0.10
0.60.2
3 +7 -3
7
PD16837
BLOCK DIAGRAM
VDD 19
8
VM1
IN1 IN2 SEL1
1 2 3 Control circuit 1 H bridge 1
5
1A
7
1B
6
PGND
4
VM2
IN3 IN4 SEL2
13 14 15 Control circuit 2 H bridge 2
5
2A
26
2B
6
PGND
4
VM3
IN5 IN6 SEL3
16 17 18 Control circuit 3 H bridge 3
5
3A
26
3B
6
PGND
4
VM4
IN7 IN8 SEL4
28 29 30 Control circuit 4 H bridge 4
5
4A
26
4B
GND
4 LVP
6
PGND
Remark Connect all VM and GND pins. : Internally pulled down to GND via 50 k.
8
PD16837
FUNCTION TABLE
VM1 to 4 VDD (common)
IN1, 7 1A, 4A (OUTA) IN2, 8 SEL1, 4 1B, 4B (OUTB)
GND (common) PGND1, 4
VM1 to 4 VDD (common)
IN3, 5 2A, 3A (OUTA) IN4, 6 SEL2, 3 2B, 3B (OUTB)
GND (common) PGND2, 3
Function Table (common to all chs) Input IN1 H L L H x IN2 L L H H x SEL H H H H L OUTA H L L H Z Output OUTB L L H H Z x: Don't care Z: High inpedance
9
PD16837
ABOUT SWITCHING When output A is switched as shown in the figure on the right, a dead time (time during which both P ch and N ch are OFF) elapses to prevent through current. Therefore, the waveform of output A (rise time, fall time, and delay time) changes depending on whether output B is fixed to the high or low level. The output voltage waveforms of A in response to an input waveform where output B is fixed to the low level (1) or high level (2) are shown below. (1) Output B: Fixed to low level Output A: Switching operation (Operations of P ch and N ch are shown.)
Dead time Input waveform
Nch Nch A B Pch Pch VM
Pch: OFF OFF Nch: ON OFF
ON OFF
******ON****** ******OFF******
OFF OFF
OFF ON
Voltage waveform at point A Current ON
Current OFF
Output A goes into a high-impedance state and is in an undefined status during the dead time period. Because output B is pulled down by the load, a low level is output to A. (2) Output B: Fixed to high level Output A: Switching operation (Operations of P ch and N ch are shown.)
Dead time Input waveform
Pch: OFF OFF Nch: ON OFF
ON OFF
******ON****** ******OFF******
OFF OFF
OFF ON
Voltage waveform at point A Current ON
Current OFF
Output A goes into a high-impedance state and is in an undefined status during the dead time period. Because output B is pulled up by the load, a high level is output to A.
10
PD16837
The switching characteristics shown on the preceding pages are specified as follows ("output at one side" means output B for H bridge output A, or output A for output B). [Rise time] Rise time when the output at one side is fixed to the low level (specified on current ON). [Fall time] Fall time when the output at one side is fixed to the high level (specified on current ON). [Rising delay time] Rising delay time when the output at one side is fixed to the low level (specified on current ON). [Falling delay time] Falling delay time when the output at one side is fixed to the high level (specified on current ON). [Change in rising delay time] Change (difference) in the rising delay time between when the output at one side is fixed to the low level and when the output at the other side is fixed to the high level. [Change in falling delay time] Change (difference) in falling delay time between when the output at one side is fixed to the low level and when the output at the other side is fixed to the high level. [Rising delay time differential] Difference in rising delay time between output A and output B. [Falling delay time differential] Difference in falling delay time between output A and output B. Caution Because this IC switches a high current at high speeds, surge may occur due to the VM and GND wiring and inductance and degrade the performance of the IC. On the PWB, keep the pattern width of the VM and GND lines as wide and short as possible, and insert the bypass capacitors between VM and GND at a location as close to the IC as possible. Connect a low-inductance magnetic capacitor (4700 pF or more) and an electrolytic capacitor of 10 F or so, depending on the load current, in parallel.
11
PD16837
RECOMMENDED SOLDERING CONDITIONS
Solder this product under the following recommended conditions. For details of the recommended soldering conditions, refer to information document Semiconductor Device Mounting Technology Manual (C10535E). For soldering methods and conditions other than those recommended, consult NEC.
Recommended Condition Symbol IR35-00-3
Soldering Method Infrared reflow
Soldering Conditions Package peak temperature: 235 C; Time: 30 secs. max. (210 C min.); Number of times: 3 times max.; Number of days: noneNote; Flux: Rosin-based flux with little chlorine content (chlorine: 0.2 Wt% max.) is recommended. Package peak temperature: 215 C; Time: 40 secs. max. (200 C min.); Number of times: 3 times max.; Number of days: noneNote; Flux: Rosin-based flux with little chlorine content (chlorine: 0.2 Wt% max.) is recommended. Package peak temperature: 260 C; Time: 10 secs. max.; Number of times: once; Flux: Rosin-based flux with little chlorine content (chlorine: 0.2 Wt% max.) is recommended.
VPS
VP-15-00-3
Wave soldering
WS60-00-1
Note Number of days in storage after the dry pack has been opened. The storage conditions are at 25 C, 65% RH MAX. Caution Do not use two or more soldering methods in combination.
12
PD16837
[MEMO]
13
PD16837
[MEMO]
14
PD16837
[MEMO]
15
PD16837
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96.5
2


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